Memory device with tungsten and aluminum interconnects

Details Memory device with tungsten and aluminum interconnects Memory device with tungsten and aluminum interconnects

1996-02-16

1997-04-15

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257765, 257774, H01L 2348, H01L 2352, H01L 2940

Patent

active

056212470

ABSTRACT:
On an insulating substrate are formed first aluminum interconnections. In openings formed in a silicon dioxide film are formed unit cells each consisting of a tungsten electrode and an aluminum alloy electrode containing silicon. Over the silicon dioxide film are formed a large number of linear second aluminum interconnections which are orthogonal to the first aluminum interconnections. At the individual intersections of the first and second aluminum interconnections are disposed the unit cells so as to compose a memory cell array. When a large current is allowed to flow through the unit cell, silicon in the aluminum alloy electrode moves in a direction opposite to the current flow and is precipitated in the aluminum electrode in the vicinity of the interface with the tungsten electrode, resulting in an increase in resistance value. When a large current is allowed to flow through the unit cell in the opposite direction, silicon is diffused, resulting in a reduction in resistance value. Data can be read by measuring the magnitude of the resistance value with an extremely small current and judging whether it is in a high state or in a low state.

REFERENCES:
patent: 4255210 (1981-03-01), Okuyama et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 5075249 (1991-12-01), Sato et al.
patent: 5177589 (1993-01-01), Kobayashi et al.
patent: 5278784 (1994-01-01), Ishihara et al.
patent: 5341026 (1994-08-01), Harada et al.

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