Memory device with sense amplifier that sets the voltage drop ac

Details Memory device with sense amplifier that sets the voltage drop ac Memory device with sense amplifier that sets the voltage drop ac

1999-08-13

2000-10-31

Nelms, David

Static information storage and retrieval

Floating gate

Particular connection

36518518, 365205, 327 51, G11C 1604

Patent

active

061412465

ABSTRACT:
The logic state stored in a memory cell having a Frohmann-Bentchkowsky p-channel memory transistor and a n-channel MOS access transistor is read by a sense amplifier which senses the magnitude of the current output from the memory cell during a read operation. The sense amplifier controls the voltage drop across the memory transistor and the access transistor (and a switching transistor) which, in turn, allows the difference in the magnitudes of the current from the programmed and unprogrammed cells to be optimized.

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