Memory device with processing function

Details Memory device with processing function Memory device with processing function

1999-03-16

2000-04-25

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 36518904, G11C 1122

Patent

active

060551763

ABSTRACT:
It is an object of the present invention to provide a memory device with processing function using less transistors, and capable of operating with simple operation and allows its operation with less trouble. Each of W cells 34 includes a ferroelectric capacitor CF. One end 40 of the ferroelectric capacitor CF is connected to one of data lines D through a transistor T1. The one end 40 of the ferroelectric capacitor CF is connected to an inner data line MW through a transistor T2. The structure of the Q cells 36 is almost the same as that of the W cells 34. Both readout/writing operations of data from the outside of the device are performed by using the data line D. Data read out from both the W cell 34 and the Q cell 36 is sent to the adder 28 and added thereby, and the resultant data of the addition is written to the Q cell 36 through a buffer circuit 32. The memory device with processing function can be realized with a simple structure by using ferroelectric capacitors CF.

REFERENCES:
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 5010518 (1991-04-01), Toda
patent: 5608667 (1997-03-01), Osawa
patent: 5726930 (1998-03-01), Hasegawa et al.
patent: 5844831 (1998-12-01), Nishimura

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