Memory device with multiple memory layers of local charge...

Details Memory device with multiple memory layers of local charge... Memory device with multiple memory layers of local charge...

2006-08-29

2006-08-29

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S185280, C365S185180, C365S185290

Reexamination Certificate

active

07098505

ABSTRACT:
A multiple memory layer device has a plurality of stacked memory layers. Each of the memory layers has: a charge generating layer of p-type semiconductor material with a plurality of n-type diffusion regions; an insulating layer disposed over the charge generating layer; a charge storing layer disposed over the insulating layer; and another insulating layer disposed over the charge storing layer. A gate is disposed over the top insulting layer in the uppermost memory layer in the plurality of stacked memory layers.

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