Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-09-04
2011-11-29
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27084, C365S148000
Reexamination Certificate
active
08067792
ABSTRACT:
One embodiment of the present invention relates to a memory cell. The memory cell includes a multi-gate field effect transistor associated with a first region of a semiconductor fin. The memory cell also includes a fin capacitor coupled to a drain of the multi-gate field effect transistor and associated with a second region of the semiconductor fin, where the fin capacitor has an approximately degenerate doping concentration in the second region. Other devices and methods are also disclosed.
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Cleavelin Cloves R.
Marshall Andrew
Tigelaar Howard L.
Xiong Weize
Brady III Wade J.
Dickey Thomas L
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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