Memory device with improved writing capabilities

Details Memory device with improved writing capabilities Memory device with improved writing capabilities

2006-10-26

2009-02-03

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S198000

Reexamination Certificate

active

07486540

ABSTRACT:
Method and memory device for reliably writing an information value to a memory element of the memory device. A first information value is represented by a first potential and a second information value is represented by a second potential. A bit line is provided for writing either the first information value or the second information value to the memory element. A potential controller is coupled to the bit line, where the potential controller is configured to apply a third potential to the bit line, which is less than the first potential when writing the first information value to the memory element.

REFERENCES:
patent: 4404661 (1983-09-01), Nagayama et al.
patent: 4493056 (1985-01-01), Mao
patent: 6671201 (2003-12-01), Masuda
patent: 2004/0057277 (2004-03-01), Fujita et al.
patent: 0 632 462 (1995-01-01), None

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