Memory device with improved temperature-sensor circuit

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S189070, C365S207000

Reexamination Certificate

active

11649569

ABSTRACT:
The preferred embodiments described below provide a method and memory device for improving the precision of a temperature-sensor circuit. In one preferred embodiment, first and second temperature-dependent reference voltages are generated and compared, and an operating condition of the memory array is controlled based on the result of the comparison. Instead of using a temperature-dependent reference voltage, a temperature-dependent reference current can be used. Other embodiments are disclosed, and each of the embodiments can be used alone or together in combination.

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