Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-02-24
2000-10-17
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
438256, 438399, H01L 27108, H01L 2976, H01L 31119, H01L 218242, H01L 2120
Patent
active
061336009
ABSTRACT:
A method for forming a capacitor (36) outwardly from a semiconductor substrate (10). Alternating layers of first and second materials (20 and 22) are formed outwardly from a semiconductor substrate. A first set of vias (24) is formed through the layers of first and second materials (20 and 22) to the semiconductor substrate(10). A second set of vias (26) is formed through the layers of first and second materials (20 and 22). Each via in the second set (26) is formed in a location that is adjacent to one of the vias of the first set (24). A trunk (28) of the first plate (34) of the capacitor (36) is formed by selectively depositing a semiconductor material, such as poly-silicon, to fill the first set of vias (24). A set of fins (30) and a dome (32) are formed on the trunk (28) to complete the first plate (34) by removing the alternating layers of first layers (20) and selectively depositing a semiconductor material between the second layers (22). The dome (32) comprises a layer of semiconductor material that is formed outwardly from the outermost layer of second material (22) with a surface area that is greater than the planar projection of the layer. The capacitor (34) is completed by removing the alternating layers of second material (22), conformally depositing a dielectric material (38) outwardly from the first plate, and forming a second plate (40) for the capacitor (34) outwardly from the dielectric layer (38).
REFERENCES:
patent: 5108943 (1992-04-01), Sandhu et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5187548 (1993-02-01), Baek et al.
patent: 5187549 (1993-02-01), Fujii
patent: 5225697 (1993-07-01), Malhi et al.
patent: 5290726 (1994-03-01), Kim
patent: 5327375 (1994-07-01), Harari
patent: 5330928 (1994-07-01), Tseng
patent: 5336922 (1994-08-01), Sakamoto
patent: 5354701 (1994-10-01), Chao
patent: 5409856 (1995-04-01), Jun
patent: 5434812 (1995-07-01), Tseng
patent: 5436186 (1995-07-01), Hsue et al.
patent: 5677222 (1997-10-01), Tseng
patent: 5714401 (1998-02-01), Kim et al.
patent: 5789267 (1998-08-01), Hsia et al.
patent: 5869861 (1999-02-01), Chen
Prince, Betty, "Semiconductor Memories", 2ed Edition, p. 170, Wiley & Sons, Pub., Jan. 1996.
Chaudhuri Olik
Micro)n Technology, Inc.
Weiss Howard
LandOfFree
Memory device with improved domed capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device with improved domed capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device with improved domed capacitors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-471725