Memory device with improved data retention

Details Memory device with improved data retention Memory device with improved data retention

2011-06-28

2011-06-28

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07968464

ABSTRACT:
The present memory device include first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second and into which ions from the passive layer may be provided, and from which the ions may be provided into the passive layer. The active layer is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone.

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