Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-05-02
2006-05-02
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000, C365S189050
Reexamination Certificate
active
07038930
ABSTRACT:
To provide a memory device with a function to perform an operation and a method of performing an operation and storage which can save space and cost and which can start, immediately after the power source is recovered, the processing which was being performed at the time of power failure. A memory cell MC can store two independent data sets; DRAM data (volatile data) and FeRAM data (non-volatile data). Thus, the number of memory cells can be reduced to a half. Also, the DRAM data to be used in the next operation of the two data sets which have been read out for the previous operation are temporarily held in a hold circuit21of an operation unit OU and then written back into the memory cell MC in a non-volatile manner as new FeRAM data for preparation of the next operation. Thus, even when the power source is shut down by an unexpected trouble, the data necessary for the next operation are not lost.
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Fujimori Yoshikazu
Kato Hiroaki
Nozawa Hiroshi
Nguyen Van-Thu
Rohm & Co., Ltd.
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