Memory device with floating gate stack

Details Memory device with floating gate stack Memory device with floating gate stack

2006-11-21

2006-11-21

Dang, Trung (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000, C438S261000, C257SE29129

Reexamination Certificate

active

07138680

ABSTRACT:
A memory device comprises a substrate including isolation regions and active regions, and a floating gate stack proximate the substrate. The floating gate stack comprises a first high-k dielectric layer proximate the substrate, a first metal layer proximate the first high-k dielectric layer, and a second high-k dielectric layer proximate the first metal layer. The memory device comprises a control gate electrode proximate the floating gate stack.

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