Static information storage and retrieval – Addressing – Including particular address buffer or latch circuit...
Patent
1996-09-11
1998-04-07
Nelms, David C.
Static information storage and retrieval
Addressing
Including particular address buffer or latch circuit...
365203, 365235, 3652385, G11C 800
Patent
active
057372764
ABSTRACT:
A memory device having normal and extended data out (EDO). modes includes an array of memory cells arranged in plurality of rows and columns, first and second data latches which store data, a column address input which receives a column address signal, and a column address strobe input which receives a column address strobe signal. First latch control means, responsive to said column address input and to the column address strobe input, electrically couples one memory cell in the array of memory cells and the first data latch when a column address signal is asserted at the column address input and electrically decouples the one memory cell and the first data latch when a column address strobe signal is asserted at the column address strobe input, thereby latching data present in the one memory cell prior to assertion of the column address strobe signal in the first data latch. Second latch control means, responsive to the column address strobe input, electrically couples the first data latch and the second data latch when a column address strobe signal is asserted at the column address strobe input and electrically decouples the first data latch and the second data latch when a column address strobe signal is deasserted at the column address strobe input, thereby latching data present in the first data latch prior to deassertion of the column address strobe signal in the second data latch.
REFERENCES:
patent: 5436865 (1995-07-01), Kitazawa
patent: 5457659 (1995-10-01), Schaefer
patent: 5532961 (1996-07-01), Mori et al.
patent: 5610864 (1997-03-01), Manning
Kang Kyung-Woo
Shin Sang-Gil
Nelms David C.
Nguyen Hien
Samsung Electronics Co,. Ltd.
LandOfFree
Memory device with fast extended data out (EDO) mode and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device with fast extended data out (EDO) mode and methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device with fast extended data out (EDO) mode and methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-19869