Memory device with external magnetic field generator and...

Details Memory device with external magnetic field generator and... Memory device with external magnetic field generator and...

2006-02-28

2009-12-29

Le, Thong Q (Department: 2827)

Induced nuclear reactions: processes, systems, and elements

Nuclear transmutation

By neutron bombardment

C365S033000, C365S022000, C365S097000, C365S173000

Reexamination Certificate

active

07639771

ABSTRACT:
A memory device with a magnetic field generator and method of operating and manufacturing the same. In the device and method, a magnetic memory may includes a magnetic tunneling junction (MTJ) cell, a transistor, and a bit line, and a magnetic field generator external to the magnetic memory to generate a global magnetic field toward the magnetic memory in a parallel direction to the bit line.

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