Memory device with different read and write power levels

Details Memory device with different read and write power levels Memory device with different read and write power levels

1979-11-08

1982-01-12

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

For complementary information

365226, G11C 700, G11C 1140

Patent

active

043109004

ABSTRACT:
A memory device in which an information can be easily written without failure is disclosed. The memory device comprises means for supplying a memory cells with a first voltage as a power supply thereto when a read operation is performed and means for supplying at least selected one of the memory cells with a second voltage which is smaller than the first voltage in absolute value.

REFERENCES:
patent: 3510849 (1970-05-01), Igarashi
patent: 4156940 (1979-05-01), Hollingsworth et al.
Haug et al., "Single Emitter Pinch Resistor Cell," IBM Tech. Disc. Bul., vol. 13, No. 2, 7/70, pp. 475-476.
McDowell, "Bilevel Power Storage Cell," IBM Tech. Disc. Bul., vol. 14, No. 6, 11/71.

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