Memory device with active layer of dendrimeric material

Details Memory device with active layer of dendrimeric material Memory device with active layer of dendrimeric material

2006-12-20

2008-11-11

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S322000, C257S323000, C257S324000, C257S325000, C257S326000, C257S906000, C257S907000, C257S908000

Reexamination Certificate

active

07449742

ABSTRACT:
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.

REFERENCES:
patent: 6806526 (2004-10-01), Krieger et al.
patent: 6844128 (2005-01-01), Hsu et al.
patent: 6864522 (2005-03-01), Krieger et al.
patent: 7276322 (2007-10-01), Bellmann et al.
patent: 2005/0186443 (2005-08-01), Marrocco et al.
patent: 2007/0105285 (2007-05-01), Kusumoto et al.

Affiliated with

Also associated with

Rating

Memory device with active layer of dendrimeric material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device with active layer of dendrimeric material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device with active layer of dendrimeric material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4039568