Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-11-13
2007-11-13
Cao, Phat X. (Department: 2814)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C257S311000
Reexamination Certificate
active
10958044
ABSTRACT:
A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces polymer memory cells at the precise locations of the contacts of the transistor array. The polymer memory cells change resistance values in response to electric current above a specified threshold value. The memory cells retain the resistivity values over time.
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Krieger Juri H
Yudanov Nicolay F
Amin Turocy & Calvin LLP
Cao Phat X.
Kalam Abul
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