Memory device with a self-assembled polymer film and method...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C257S311000

Reexamination Certificate

active

10958044

ABSTRACT:
A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces polymer memory cells at the precise locations of the contacts of the transistor array. The polymer memory cells change resistance values in response to electric current above a specified threshold value. The memory cells retain the resistivity values over time.

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