Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-15
2005-02-15
Lebentritt, Michael (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257S771000
Reexamination Certificate
active
06855977
ABSTRACT:
A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces polymer memory cells at the precise locations of the contacts of the transistor array. The polymer memory cells change resistance values in response to electric current above a specified threshold value. The memory cells retain the resistivity values over time.
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Krieger Juri H.
Yudanov N. F.
Advanced Micro Devices , Inc.
Amin & Turocy LLP
Lebentritt Michael
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