Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-20
1999-11-23
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257391, 257206, 257401, 257326, H01L 2976, H01L 2994, H01L 29792, H01L 2710
Patent
active
059905263
ABSTRACT:
A memory device comprising a semiconductor material substrate with a dopant of a first type, a first semiconductor material well with a dopant of a second type formed in the substrate; a second semiconductor material well with a dopant of the first type formed in the first well, an array of memory cells formed within the second well. Each memory cell comprises a first electrode and a second electrode respectively formed by a first and a second doped regions with dopant of the second type formed in the second well, and a control gate electrode. The memory array comprises a first plurality of strips of conductive material extending over the second well in a first direction and forming rows of memory cells, a second plurality of strips of conductive material extending over the second well in a second direction substantially orthogonal to the first direction and forming columns of memory cells, each strip of the second plurality electrically contacting the first electrodes of a respective group of memory cells, a third plurality of strips of conductive material extending over the second well in the second direction and intercalated to the strips of the second plurality, electrically contacting the second electrodes of the cells. A fourth plurality of strips of conductive material is provided extending over the second well in the second direction and intercalated to the strips of the second and the third pluralities, electrically contacting the second well in a succession of contact points distributed longitudinally to each strip of the fourth plurality.
REFERENCES:
patent: 4933736 (1990-06-01), Conner et al.
patent: 5031018 (1991-07-01), Shirato et al.
patent: 5396100 (1995-03-01), Yamasaki et al.
patent: 5650956 (1997-07-01), Choi
Bez Roberto
Modelli Alberto
Carlson David V.
de Guzman Dennis M.
Fenty Jesse A.
Martin-Wallace Valencia
STMicroelectronics S.r.l.
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