Memory device which receives write masking information

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C711S167000

Reexamination Certificate

active

06912620

ABSTRACT:
A method is described for providing a memory with a serial sequence of write enable signals that are offset in time with respect to respective data received by a plurality of data inputs of the memory. A memory is also described with an array for data storage, a plurality of data input pins, and a separate pin for receiving either additional data or a serial sequence of write enable signals applicable to data received by the plurality of data input pins. The additional data that the separate pin can receive includes, for example, error detection and correction (EDC) information. A method is also described for multiplexing write enable information and error detection and correction information.

REFERENCES:
patent: 5539696 (1996-07-01), Patel
patent: 5568428 (1996-10-01), Toda
patent: 5604705 (1997-02-01), Ackland et al.
patent: 5644537 (1997-07-01), Toda
patent: 5655113 (1997-08-01), Leung et al.
patent: 5778419 (1998-07-01), Hansen et al.
patent: 5796660 (1998-08-01), Toda
patent: 6035369 (2000-03-01), Ware et al.
patent: 6266737 (2001-07-01), Ware et al.
patent: 6493789 (2002-12-01), Ware et al.
patent: 6496897 (2002-12-01), Ware et al.
patent: 6681288 (2004-01-01), Ware et al.
patent: 0759621 (1997-02-01), None
patent: 0 655 741 (1999-04-01), None
patent: 2159649 (1990-06-01), None
Ishibashi et al., “A 300 MHz 4-Mb Wave-Pipeline CMOS SRAM Using a Multi-Phase PLL”, IEEE Journal of Solid-State Circuits, vol. 30, No. 11, pp. 1189-1195, Nov. 1995.
Nambu et al., “A 0.65-ns, 72-kb ECL-CMOS RAM Macro for a 1-Mb SRAM”, IEEE Journal of Solid-State Circuits, vol. 30, No. 4, pp. 491-499, Apr. 1995.
Nakamura et al., “A 220-MHz Pipelined 16-Mb BiCMOS SRAM with PLL Proportional Self-Timing Generator”, IEEE Journal of Solid-State Circuits, vol. 29, No. 11, pp. 1317-1322, Nov. 1994.
Yamashita et al., “A 3.84 GIPS Integrated Memory Array Processor with 64 Processing Elements and a 2-Mb SRAM”, IEEE Journal of Solid-State Circuits, vol. 29, No. 11, pp. 1336-1343, Nov. 1994.
Ishibashi, et al., “FP 18.5: A 300 MHz 4-Mb Wave-Pipeline CMOS SRAM Using a Multi-Phase PLL”, IEEE International Solid-State Circuits Conference, pp. 308-309, Feb. 1995.
Tan et al., “FA 15.1: An 800MHz Quadrature Digital Synthesizer with ECL-Compatible Output Drivers in 0.89m CMOS”, IEEE International Solid-State Circuits Conference, pp. 258-259, Feb. 1995.
Yamashita et al., “FA 15.2: A 3.84 GIPS Integrated Memory Array Processor LSI with 64 Processing Elements and 2-Mb SRAM”, IEEE International Solid-State Circuit Conference, pp. 260-261, Feb. 1994.
MoSys Incorporated Technology White Paper, Jul. 1994, pp. 1-15.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory device which receives write masking information does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device which receives write masking information, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device which receives write masking information will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3485918

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.