Static information storage and retrieval – Read/write circuit – Signals
Patent
1980-05-28
1982-07-20
Konick, Bernard
Static information storage and retrieval
Read/write circuit
Signals
369210, 369239, G11C 700, G11C 1140
Patent
active
043409431
ABSTRACT:
A memory device utilizing metal oxide semiconductor field effect transistors (MOS FETs) formed in a semiconductor substrate. The memory device is so improved as to be accessed without a delay and as not to behave erroneously, in spite of a potential variation of data line or the semiconductor substrate. It comprises a plurality of row lines for supplying input signals, a plurality of column lines for supplying output signals, decoders for selecting any one of these lines, a plurality of memory cells connected to the row and column lines in a specific manner, a voltage sensing circuit connected to the column lines, a first potential source connected to the column lines, a second potential source for supplying the memory cells with a source voltage, and means for holding the column lines at a potential substantially equal to the voltage supplied from the second potential source when the potential of the column lines or the substrate varies.
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Asano Masamichi
Iwahashi Hiroshi
Konick Bernard
McElheny Jr. Donald
Tokyo Shibaura Denki Kabushiki Kaisha
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