Memory device utilizing giant magnetoresistance effect

Details Memory device utilizing giant magnetoresistance effect Memory device utilizing giant magnetoresistance effect

1999-05-17

2000-04-25

Mai, Son

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, G11C 1100, G11C 1114, G11C 1115

Patent

active

060551798

ABSTRACT:
A memory device using giant magnetoresistance (GMR) effect, and an inexpensive memory device that has low power consumption, excels in memory performance, and is suitable for use in computer peripherals.
The memory device utilizes giant magnetoresistance effect and includes a substrate with an insulating surface; a monocrystalline semiconductor layer formed on the insulating surface of the substrate, a switching element formed at least on part of the monocrystalline semiconductor layer, a magnetoresistive film formed on the insulating surface of the substrate, the magnetoresistive film comprising a first magnetic layer and a second magnetic layer which has a higher coercive force than the first magnetic layer and which is stacked on the first magnetic layer with a non-magnetic layer interposed between them, and a word line installed near the magnetoresistive film with an insulating layer interposed between them, and the switching element is connected electrically to either the magnetoresistive film or word line.

REFERENCES:
patent: 5173873 (1992-12-01), Wu et al.
patent: 5343422 (1994-08-01), Kung et al.
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5587943 (1996-12-01), Torok et al.
patent: 5841611 (1998-11-01), Sakakima et al.

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