Memory device utilizing carbon nanotubes

Details Memory device utilizing carbon nanotubes Memory device utilizing carbon nanotubes

2006-03-21

2006-03-21

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S288000, C257S321000, C257S324000

Reexamination Certificate

active

07015500

ABSTRACT:
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

REFERENCES:
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patent: 1 091 418 (2001-04-01), None
Tans, S. et al, “Room-temperature transistor based on a single carbon . . . ”, Nature, 393:49-52 (May 1998).
Tans, S. et al, “Potential modulations along carbon nanotubes”, Nature, 404:834 (Apr. 2000).
Choi et al, “Carbon-nanotube-based nonvolatile . . . ”, Applied Physics Letters, 82(2):275-277 (Jan. 2003).

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