Memory device using quantum dots

Details Memory device using quantum dots Memory device using quantum dots

2005-09-21

2009-02-17

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51003, C257SE51029, C257SE51030, C257SE51034, C438S099000, C438S381000, C977S753000, C977S783000

Reexamination Certificate

active

07491968

ABSTRACT:
A memory device, which includes a memory layer having quantum dots uniformly dispersed in organic material disposed between an upper electrode layer and a lower electrode layer. The memory device is advantageous because it is nonvolatile and inexpensive, and realizes high integration and high speed switching. Further, size and distribution of the quantum dots may be uniform, thus realizing uniform memory behavior. Furthermore, the memory device is suitable for application to portable electronic devices that must have low power consumption, due to low operating voltages thereof.

REFERENCES:
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 7057206 (2006-06-01), Halik et al.
patent: 7065285 (2006-06-01), Chen et al.
patent: 2002/0163057 (2002-11-01), Bulovic et al.
patent: 2005/0072989 (2005-04-01), Bawendi et al.
patent: 2005/0227382 (2005-10-01), Hui
patent: 2005/0270442 (2005-12-01), Yang et al.
patent: 2005/0274943 (2005-12-01), Chen
patent: 2005/0287717 (2005-12-01), Heald et al.
patent: 62-95882 (1987-05-01), None
patent: 1020047017341 (2004-12-01), None
R.E. Thurstans et al., “The electroformed metal-insulator-metal structure: a comprehensive model”, J. Phys. D: Appl. Phys. 35, 2002, pp. 802-809.
L.P. Ma et al., “Organic electrical bistable devices and rewritable memory cells”, Applied Physics Letters, vol. 80, No. 16, Apr. 22, 2002, pp. 2997-2999.
Liping. Ma et al.,“Nonvolatile electrical bistability of organic/metal-nanocluster/organid system”, Applied Physics Letters, vol. 82, No. 9, Mar. 3, 2003, pp. 1419-1421.
Korean Office Action dated Apr. 14, 2008 and English translation.

Affiliated with

Also associated with

Rating

Memory device using quantum dots does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device using quantum dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device using quantum dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4063124