Memory device using movement of protons

Details Memory device using movement of protons Memory device using movement of protons

1998-08-05

2000-10-31

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438 3, H01L 2100

Patent

active

061401579

ABSTRACT:
An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

REFERENCES:
patent: 4322881 (1982-04-01), Enomoto et al.
patent: 5830575 (1998-11-01), Warren et al.

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