Static information storage and retrieval – Systems using particular element
Patent
1994-10-14
1996-11-19
Zarabian, A.
Static information storage and retrieval
Systems using particular element
365118, 315349, G11C 1100
Patent
active
055769861
ABSTRACT:
A highly reliable memory device with excellent heat resistance that can be used in any environment utilizes a chemical change to define a state transition. The memory device includes a micro vacuum tube structure having a recess portion formed on an upper face of a quartz substrate, a cold cathode having many comb-tooth like tips extending from the quartz substrate over to one side of the recess portion, a rectangular control electrode disposed on the side of the cold cathode at the bottom of the recess portion, an anode extending from the quartz substrate over to the other side of the recess portion and facing opposed to the cold cathode, and a sealing member for vacuum sealing a space inside the recess portion 11a. N.sub.2 and O.sub.2 gases are enclosed in a space under the pressure of 0.2 mmHg. By changing the control electrode voltage, energy of accelerated electrons is changed: NO is produced at the control voltage of 17 eV, NO2 at 23 eV and the product gases dissociate to N.sub.2 and O.sub.2 by glow discharge at the control voltage higher than 23 eV. The chemical reaction is used to indicate the storage of information.
REFERENCES:
patent: 3787705 (1974-01-01), Bolin
patent: 3949264 (1976-04-01), Hofstein
patent: 4185226 (1980-01-01), Heymann
patent: 4196373 (1980-04-01), Parks
patent: 5155567 (1992-10-01), Haga
"The Electrochemistry of Gases and Other Dielectrics" by G. Glockler and S. C. Lind; John Wiley & Sons, 1939, p. 106.
IEEE Transactions on Electron Devices, vol. 38, No. 10 (Oct. 1991), pp. 2334-2336.
Amano Akira
Kuroda Hidekatsu
Matsuzaki Kazuo
Sakai Yoshiyuki
Urano Yuichi
Fuji Electric & Co., Ltd.
Zarabian A.
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