Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2008-09-18
2010-12-07
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000
Reexamination Certificate
active
07848139
ABSTRACT:
A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.
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Gao Kaizhong
Ouyang Jun
Shi Yiming
Xi Haiwen
Xue Song S.
Fredrikson & Bryon, P.A.
Phung Anh
Seagate Technology LLC
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