Memory device of ferro-electric

Details Memory device of ferro-electric Memory device of ferro-electric

2006-08-15

2006-08-15

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189090, C365S210130

Reexamination Certificate

active

07092275

ABSTRACT:
In a ferro-electric memory including reference cells, if one reference cell is associated with a plurality of normal cells, a period in which “L” data is written in the reference cell and a period in which “H” data is written or read out in/from the reference cell are controlled to be shorter than a period in which “L” data is written in each normal cell and a period in which “H” data is written or read out in/from each normal cell, respectively. In this manner, stress applied to the reference cell is reduced and, even if writing or reading is repeatedly performed on the normal cells, the reliability of the reference cell is enhanced and deterioration in characteristics of the reference cell due to repetitive rewriting of data is suppressed.

REFERENCES:
patent: 5999439 (1999-12-01), Seyyedy
patent: 6028783 (2000-02-01), Allen et al.
patent: 6859380 (2005-02-01), Ashikaga
patent: 6912149 (2005-06-01), Yamaoka et al.
Chung, Yeonbae, et al., “A 3.3-V 4-Mb Nonvolatile Ferroelectric RAM with a Selectivity-Driven Double-Pulsed Plate Read/Write-Back Scheme”, Symposium on VLSI Circuits Digest of Technical Papers, pp. 97-98, 1999.

Affiliated with

Also associated with

Rating

Memory device of ferro-electric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device of ferro-electric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device of ferro-electric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3624087