Memory device, method for reading information from the memory de

Static information storage and retrieval – Systems using particular element – Negative resistance

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365175, 365187, G11C 1100

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active

054385393

ABSTRACT:
A memory device includes a first address signal line, a pair of second address signal lines, a standby signal line, and a memory cell provided at a cross point at which the first address signal line crosses the pair of second address signal lines. The memory cell includes first and second elements connected, via a connection node, in series between the pair of second address signal lines in a forward direction, each of the first and second elements having a negative-differential conductance characteristic. A threshold diode is connected between the first address signal line and the connection node, and has a characteristic in which a current flows in the threshold diode when a voltage applied across the threshold diode exceeds threshold voltages. A gate is connected to the standby signal line and controls currents flowing in the first and second elements.

REFERENCES:
patent: 3201595 (1965-08-01), Miller
patent: 3594737 (1971-07-01), Haure-Touze
IBM Technical Disclosure Bulletin. "Transferred-Electron Static Memory Cell". vol. 28, No. 12, May 1986.

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