Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2009-11-04
2011-12-13
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230030, C365S230050
Reexamination Certificate
active
08077537
ABSTRACT:
Provided is a memory device in which the decrease of the effective bandwidth caused by the refresh operation of the memory device has been solved, a memory controller of the memory device, and a memory system thereof. A memory device that is operated in response to a command from a memory controller has a plurality of banks that respectively have memory cores including memory cell arrays and decoders and are selected by bank addresses; and a control circuit, which, in response to a background refresh command, causes the memory cores within refresh target banks set by the memory controller to successively execute refresh operation a number of times corresponding to refresh burst length that is set by the memory controller, and, in response to a normal operation command, further causes the memory cores within banks other than the refresh target banks and selected by the bank addresses to execute normal memory operation corresponding to the normal operation command, during the refresh operation executed by the memory cores within the refresh target banks.
REFERENCES:
patent: 5867428 (1999-02-01), Ishii et al.
patent: 6219292 (2001-04-01), Jang
patent: 7668040 (2010-02-01), Ikeda et al.
patent: 2005/0265104 (2005-12-01), Remaklus et al.
patent: 2006/0087903 (2006-04-01), Riho et al.
patent: 2007/0086258 (2007-04-01), Freebern
patent: 08-115594 (1996-05-01), None
patent: 08-129881 (1996-05-01), None
patent: 08-180675 (1996-07-01), None
patent: 09-231745 (1997-09-01), None
patent: 10-11348 (1998-01-01), None
patent: 10-105367 (1998-04-01), None
patent: 2001-312885 (2001-11-01), None
patent: 2002-132577 (2002-05-01), None
patent: 2006-0053426 (2006-05-01), None
Ikeda Hitoshi
Kamata Shinnosuke
Kanda Tatsuya
Kawakubo Tomohiro
Kobayashi Hiroyuki
Arent & Fox LLP
Elms Richard
Fujitsu Semiconductor Limited
Nguyen Hien
LandOfFree
Memory device, memory controller and memory system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device, memory controller and memory system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device, memory controller and memory system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4310508