Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-10-24
2006-10-24
Phan, Trong (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S233100
Reexamination Certificate
active
07126865
ABSTRACT:
A memory device including a parallel test circuit can overcome a channel deficiency phenomenon of test equipment by reducing the number of input/output pads. The memory device including a parallel test circuit comprises a burst length regulating block, a parallel test block, an output block and a plurality of input/output pads. The burst length regulating block sets a second burst length at a test mode which is longer than a first burst length at a normal mode. The parallel test block compresses data and tests the compressed data by a repair unit. The output block sequentially outputs data outputted from at least two or more parallel test blocks depending on the second burst length. The plurality of input/output pads externally output data outputted from the output block.
REFERENCES:
patent: 6381715 (2002-04-01), Bauman et al.
patent: 6529428 (2003-03-01), Oh
patent: 6606274 (2003-08-01), Ooishi et al.
patent: 6917563 (2005-07-01), Lindstedt et al.
patent: 10-1996-0037470 (1999-09-01), None
Chu Shin Ho
Hong Yun Seok
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Phan Trong
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