Memory device including barrier layer for improved switching...

Details Memory device including barrier layer for improved switching... Memory device including barrier layer for improved switching...

2006-12-26

2006-12-26

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C257S040000

Reexamination Certificate

active

07154769

ABSTRACT:
The present memory device includes a first electrode, a passive layer on and in contact with the first electrode, the passive layer including copper sulfide, a barrier layer on and in contact with the passive layer, an active layer on and in contact with the barrier layer, and a second electrode on and in contact with the active layer. The inclusion of the barrier layer in this environment increases switching speed of the memory device, while also improving data retention thereof.

REFERENCES:
patent: 6768157 (2004-07-01), Krieger et al.
patent: 6806526 (2004-10-01), Krieger et al.
patent: 6977389 (2005-12-01), Tripsas et al.
patent: 2005/0227382 (2005-10-01), Hui
patent: 2006/0067105 (2006-03-01), Fang et al.

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