Memory device including a gate control layer

Details Memory device including a gate control layer Memory device including a gate control layer

2011-06-28

2011-06-28

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S318000, C257S320000, C257S321000, C257S322000, C257SE21422, C257SE29300

Reexamination Certificate

active

07968934

ABSTRACT:
An integrated memory device, an integrated memory chip and a method for fabricating an integrated memory device is disclosed. One embodiment provides at least one integrated memory device with a drain, a source, a floating gate, a selection gate and a control gate, wherein the conductivity between the drain and the source can be controlled independently via the control gate.

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