Memory device in which data is written or read by a...

Details Memory device in which data is written or read by a... Memory device in which data is written or read by a...

2007-03-23

2010-02-16

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

C365S185050, C365S164000, C977S742000, C977S943000

Reexamination Certificate

active

07663902

ABSTRACT:
A memory device and a method for fabricating the same provide a device capable of increasing or maximizing the performance of a microstructure device. The device includes: a plurality of word lines formed with a gap therebetween and extending in parallel with each other in a first direction of extension; and a bit line insulated from the plurality of word lines, intersecting the plurality of word lines and extending in a second direction of extension, a transition electrode portion of the bit line positioned in the gap and spaced apart from the plurality of word lines by a predetermined distance, the transition electrode portion of the bit line configured and arranged to be bent toward any one of the plurality of word lines in response to an electrical signal applied to at least one of the plurality of word lines.

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