Memory device having variable resistive memory element

Details Memory device having variable resistive memory element Memory device having variable resistive memory element

2006-12-05

2006-12-05

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

07145791

ABSTRACT:
A memory device is obtained in which stable recording of information can be performed and a period of time required for the recording of information can be shortened. The memory device includes a memory cell C formed of a memory element Amn having a characteristic in which a resistance value changes when applying between both ends of the memory element Amn a voltage equal to or more than a threshold voltage and a circuit element Tmn as a load connected in series to the memory element Amn; and when an operation to change the memory element Amn from a state of high resistance value to a state of low resistance value is defined as writing and when a voltage applied between both ends of the memory element Amn and the circuit element Tmn is equal to or more than a certain voltage value which is larger than the threshold voltage, the memory device has a characteristic in which a combined resistance value of the memory element Amn and the circuit element Tmn in the memory cell C after writing becomes almost constant value irrespective of the magnitude of applied voltage.

REFERENCES:
patent: 6954385 (2005-10-01), Casper et al.
patent: 2004/0184331 (2004-09-01), Hanzawa et al.
patent: 2005/0174840 (2005-08-01), Tsushima et al.

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