Memory device having storage part and thin-film part

Details Memory device having storage part and thin-film part Memory device having storage part and thin-film part

2005-12-20

2005-12-20

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S306000, C257S310000

Reexamination Certificate

active

06977402

ABSTRACT:
A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness of the storage part and which is at least about 15% of the thickness of the storage part on average, a second electrode film formed on the storage part of the storage material film. The thickness of the thin-film part may be between 15% and 95% of the thickness of the storage part. An insulator film may be formed on the thin-film part and the second electrode part, the insulator film formed on the thin-film part having a same pattern as the thin-film part.

REFERENCES:
patent: 6249014 (2001-06-01), Bailey
patent: 2001-210795 (2001-08-01), None
patent: 2002-299579 (2002-10-01), None

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