Memory device having serially connected resistance nodes

Details Memory device having serially connected resistance nodes Memory device having serially connected resistance nodes

2007-10-16

2007-10-16

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S379000, C257S536000, C257S539000, C257SE29300

Reexamination Certificate

active

11376423

ABSTRACT:
A memory device may include a plurality of resistance nodes. The resistance nodes may be connected serially in a NAND or AND structure, by a plurality of metal plugs. The metal plugs may have a lower resistance. A control device corresponding to each resistance node may control the resistance devices. Each control device may be connected to a bit line and a word line. The bit line may be connected to the metal plugs via a corresponding switch device.

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C. Rossel et al., “Electrical Current Distribution Across A Metal-Insulator-Metal Structure During Bistable Switching” Journal of Applied Physics. vol. 90, No. 6, pp. 2892-2898. Sep. 15, 2001.
Korean Office Action dated May 26, 2006 (with English translation).

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