Memory device having low Vpp current consumption

Details Memory device having low Vpp current consumption Memory device having low Vpp current consumption

2007-09-04

2007-09-04

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S149000, C365S150000, C365S230030, C365S233100

Reexamination Certificate

active

11240333

ABSTRACT:
A method of performing a self refresh of memory cells in a memory device. The memory device includes a first group of cell blocks and a second group of cell blocks and each cell block of the first group shares at least one sense amplifier with a cell block of the second group. The method includes simultaneously activating each cell block of the first group. While the cell blocks of the first group are activated, each memory cell in the first group is refreshed. The method further includes simultaneously activating each cell block of the second group. While the cell blocks of the second group are activated each memory cell in the second group is refreshed.

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PCT International Search Report and Written Opinion dated Dec. 19, 2006.

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