Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2006-07-03
2009-12-01
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C438S308000, C438S131000, C438S257000, C438S095000
Reexamination Certificate
active
07625777
ABSTRACT:
In an embodiment, a memory device, with a highly integrated cell stricture, includes a mold insulating layer disposed on a semiconductor substrate. At least one conductive line is disposed on the mold insulating layer. Data storage elements self-aligned with the conductive line are interposed between the conductive line and the mold insulating layer. In this case, each of the data storage elements may include a resistor pattern and a barrier pattern, which are sequentially stacked, and the resistor pattern may be self-aligned with the barrier pattern.
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English language abstract of Korean Publication No. 10-2004-0054250.
English language abstract of Korean Publication No. 10-2005-0011059.
Lee Se-Ho
Oh Jae-Hee
Park Jae-Hyun
Goodwin David
Loke Steven
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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