Memory device having high work function gate and method of...

Details Memory device having high work function gate and method of... Memory device having high work function gate and method of...

2005-06-28

2005-06-28

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

06912163

ABSTRACT:
A charge trapping dielectric memory device. The memory device includes a gate electrode disposed over a dielectric stack that includes a dielectric charge trapping layer. The gate electrode has a work function of about 4.6 eV to about 5.2 eV.

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