Memory device having high speed sense amplifier comprising...

Details Memory device having high speed sense amplifier comprising... Memory device having high speed sense amplifier comprising...

2007-05-29

2007-05-29

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S207000

Reexamination Certificate

active

11071351

ABSTRACT:
A sense amplifier is constructed to reduce the occurrence of malfunctions in a memory read operation, and thus degraded chip yield, due to increased offset of the sense amplifier with further sealing down. The sense amplifier circuit is constructed with a plurality of pull-down circuits and a pull-up circuit, and a transistor in one of the plurality of pull-down circuits has a constant such as a channel length or a channel width larger than that of a transistor in another pulldown circuit. The pull-down circuit with a larger constant of a transistor is first activated, and then, the other pull-down circuit and the pull-up circuit are activated to perform the read operation.

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