Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-07
2006-02-07
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C977S726000
Reexamination Certificate
active
06995416
ABSTRACT:
The invention provides a memory device for storing electrical charge, which has, as memory elements, tube elements applied on an electrode layer and connect-connected thereto. The tube elements are provided with a dielectric coating, a filling material for filling the space between the tube elements being provided. A counter-electrode connected to the filling material is formed such that an electrical capacitor for storing electrical charge is formed between the electrode layer and the counter-electrode. The tube elements advantageously comprise carbon nanotubes, as a result of which the capacitance of the capacitor on account of a drastic increase in the area of the capacitor electrode surface.
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Reisinger Hans
Schäfer Herbert
Stengl Reinhard
Ho Tu-Tu
Infineon - Technologies AG
Morrison & Foerster / LLP
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