Memory device etch methods

Details Memory device etch methods Memory device etch methods

2011-07-05

2011-07-05

Such, Matthew W (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21180

Reexamination Certificate

active

07972951

ABSTRACT:
A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second dielectric layer. The method also forms a hard mask layer over the control gate layer, forms a bottom anti-reflective coating (BARC) layer over the hard mask layer, and provides an etch chemistry that includes tetrafluoromethane (CF4) and trifluoromethane (CHF3) to etch at least the control gate layer.

REFERENCES:
patent: 6254966 (2001-07-01), Kondo
patent: 6337285 (2002-01-01), Ko
patent: 6518103 (2003-02-01), Lai
patent: 7037850 (2006-05-01), Lee et al.
patent: 7670959 (2010-03-01), Hui et al.
Co-pending U.S. Appl. No. 11/616,085, filed Dec. 26, 2006; Angela T. Hui et al., entitled “Memory Device Etech Methods”.
Xuejue Huang et al., “Sub 50-nm FinFET: PMOS,” 1999 IEEE, IEDM, pp. 67-70.
Yang-Kyu Choi et al., “Nanoscale CMOS Spacer FinFET for the Terabit Era,” IEEE Electron Device Letters, vol. 23, No. 1, Jan. 2002, pp. 25-27.
Xuejue Huang et al., “Sub-50 nm P-Channel FinFET,” IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 880-886.
Yang-Kyu Choi et al., “Sub-20nm CMOS FinFET Technologies,” 2001 IEEE, IEDM, pp. 421-424.
Digh Hisamoto et al., “FinFET—A Self-Aligned Double-Gate MOSFET Scalable to 20 nm,” IEEE Transactions on Electron Devices, vol. 47, No. 12, Dec. 2000, pp. 2320-2325.

Affiliated with

Also associated with

Rating

Memory device etch methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device etch methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device etch methods will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2713244