Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-03-29
2011-03-29
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S189050, C365S230060, C365S185180, C365S185110, C365S185120, C365S185230, C365S132000, C365S189200
Reexamination Certificate
active
07916538
ABSTRACT:
A memory device includes a memory cell array including a NAND flash cell portion including a plurality of first columns of serially-connected flash memory cells and a non-volatile random access memory (NVRAM) cell portion including a plurality of second columns of NVRAM cells. The flash memory cells and the NVRAM cells are arranged such that respective word lines are connected to flash memory cells and NVRAM cells in each of respective rows, which may correspond to page units including flash memory cells and NVRAM cells.
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patent: 2006/0176726 (2006-08-01), Bhattacharyya et al.
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Jeon Byung-Gil
Jeong Hong-Sik
Min Byung-jun
Hidalgo Fernando N
Ho Hoai V
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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