Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-04-26
2011-04-26
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S145000, C365S229000, C365S227000, C365S228000, C365S230030, C365S189050
Reexamination Certificate
active
07933161
ABSTRACT:
A memory capable of preventing a memory cell from disappearance of data resulting from accumulated disturbances is obtained. This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell. The refresh portion reads data from and rewrites data in the memory cell in a power-down state.
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Machine translation of JP 2000-11665A, published Jan. 14, 2000.
English translation of First Office Action received in Chinese Patent Application No. 200610121356.6 mailed Jul. 3, 2009.
Notification of Completion of Formalities for Registration and Notification for the Grant of Invention Patent Right and mailed Dec. 18, 2009 in Chinese Patent Application No. 200610121356.6.
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Matsushita Shigeharu
Miyamoto Hideaki
Patrenella Capital Ltd., LLC
Schwabe Williamson & Wyatt P.C.
Tran Andrew Q
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