Memory device, circuits and methods for operating a memory...

Details Memory device, circuits and methods for operating a memory... Memory device, circuits and methods for operating a memory...

2007-01-09

2007-01-09

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S207000, C365S210130

Reexamination Certificate

active

11125923

ABSTRACT:
A ferroelectric memory comprises a plurality of memory cells and circuitry to sense data thereof. Power supply decoupling circuitry may decouple supplies of the memory device during a portion of reading data. Additionally, ferroelectric domains of the memory cells may receive a series of polarization reversals to improve domain alignment and malleability. To drive reference cells of the memory with such polarization reversals, a multiplexer may be configured to swap a data bitline with a reference bitline so that reference cells may be accessed as regular data cells. While reading a ferroelectric memory, a self-timer circuit may monitor characteristics of the ferroelectric material and adjust an integration duration for a sense amplifier based on the monitored characteristics. A sampling-comparator may sample a signal related to the ferroelectric material at one instant, which may then be used subsequently thereafter by the self-timer circuit to influence an integration duration of the sense amplifier.

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