Memory device capable of stable data writing

Details Memory device capable of stable data writing Memory device capable of stable data writing

2005-05-24

2005-05-24

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Hall effect

C365S230030, C365S189011

Reexamination Certificate

active

06898114

ABSTRACT:
A memory device according to the present invention includes a memory cell array including a plurality of memory cells arranged therein, the memory cell array being divided into a plurality of regions each selectable independently of the others as an object for data writing, and further includes a plurality of current supply sections provided correspondingly to the plurality of regions, respectively. Each of the plurality of current supply sections, when a corresponding region of the plurality of regions is selected as an object for data writing, is activated to supply a data write current to the corresponding region and each of the plurality of regions includes a plurality of write select lines provided correspondingly to predetermined units of the plurality of memory cells. The plurality of write select lines are selectively supplied with the data write current from a corresponding one of the plurality of current supply sections.

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U.S. patent application Ser. No. 10/327,888, Hidaka.

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