Memory device and semiconductor device

Details Memory device and semiconductor device Memory device and semiconductor device

2011-01-25

2011-01-25

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S068000, C257S088000, C257S021000, C257S051000, C438S099000, C428S690000, C428S917000, C428S212000, C313S504000, C313S506000

Reexamination Certificate

active

07875881

ABSTRACT:
Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.

REFERENCES:
patent: 5236850 (1993-08-01), Zhang
patent: 5254208 (1993-10-01), Zhang
patent: 5374564 (1994-12-01), Bruel
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5656516 (1997-08-01), Suzuki
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5837619 (1998-11-01), Adachi et al.
patent: 5876497 (1999-03-01), Atoji
patent: 5989737 (1999-11-01), Xie et al.
patent: 6008076 (1999-12-01), Codama et al.
patent: 6013384 (2000-01-01), Kido et al.
patent: 6103009 (2000-08-01), Atoji
patent: 6127702 (2000-10-01), Yamazaki et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6271101 (2001-08-01), Fukunaga et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6388652 (2002-05-01), Yamazaki et al.
patent: 6423429 (2002-07-01), Kido et al.
patent: 6479334 (2002-11-01), Codama et al.
patent: 6486601 (2002-11-01), Sakai et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6589673 (2003-07-01), Kido et al.
patent: 6602761 (2003-08-01), Fukunaga
patent: 6620528 (2003-09-01), Yamazaki et al.
patent: 6686623 (2004-02-01), Yamazaki
patent: 6778164 (2004-08-01), Yamazaki et al.
patent: 6803264 (2004-10-01), Yamazaki et al.
patent: 6849872 (2005-02-01), Yamazaki et al.
patent: 6875633 (2005-04-01), Fukunaga
patent: 6908797 (2005-06-01), Takano
patent: 6947321 (2005-09-01), Tanabe
patent: 7119365 (2006-10-01), Takafuji et al.
patent: 7158161 (2007-01-01), Gyoutoku et al.
patent: 7176525 (2007-02-01), Fukunaga
patent: 7199024 (2007-04-01), Yamazaki
patent: 7256776 (2007-08-01), Yamazaki et al.
patent: 7499305 (2009-03-01), Nomura et al.
patent: 2001/0019877 (2001-09-01), Miyake et al.
patent: 2002/0070454 (2002-06-01), Yasukawa
patent: 2003/0111666 (2003-06-01), Nishi et al.
patent: 2003/0183699 (2003-10-01), Masui
patent: 2003/0189401 (2003-10-01), Kido et al.
patent: 2004/0061176 (2004-04-01), Takafuji et al.
patent: 2004/0104424 (2004-06-01), Yamazaki
patent: 2004/0161192 (2004-08-01), Hamano et al.
patent: 2004/0164302 (2004-08-01), Arai et al.
patent: 2005/0006640 (2005-01-01), Jackson et al.
patent: 2005/0009252 (2005-01-01), Yamazaki et al.
patent: 2005/0084712 (2005-04-01), Kido et al.
patent: 2005/0084713 (2005-04-01), Kido et al.
patent: 2005/0098207 (2005-05-01), Matsumoto et al.
patent: 2005/0106419 (2005-05-01), Endoh et al.
patent: 2005/0170208 (2005-08-01), Yatsunami et al.
patent: 2005/0260800 (2005-11-01), Takano
patent: 2006/0008740 (2006-01-01), Kido et al.
patent: 2006/0157691 (2006-07-01), Lee et al.
patent: 2006/0263634 (2006-11-01), Yamazaki
patent: 2006/0292394 (2006-12-01), Iwaki et al.
patent: 2007/0042221 (2007-02-01), Kawamura
patent: 2007/0063281 (2007-03-01), Takafuji et al.
patent: 2007/0087488 (2007-04-01), Moriwaka
patent: 2007/0108510 (2007-05-01), Fukunaga
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2007/0184632 (2007-08-01), Yamazaki et al.
patent: 2007/0200125 (2007-08-01), Ikeda et al.
patent: 2007/0254432 (2007-11-01), Yamazaki et al.
patent: 2007/0281440 (2007-12-01), Cites et al.
patent: 2007/0291022 (2007-12-01), Yamazaki et al.
patent: 2008/0246109 (2008-10-01), Ohnuma et al.
patent: 2008/0268263 (2008-10-01), Yamazaki
patent: 2008/0268618 (2008-10-01), Yamazaki
patent: 2008/0308794 (2008-12-01), Ibe et al.
patent: 2009/0001879 (2009-01-01), Ikeda et al.
patent: 2009/0001886 (2009-01-01), Ibe et al.
patent: 02-054532 (1990-02-01), None
patent: 03-274695 (1991-12-01), None
patent: 09-063771 (1997-03-01), None
patent: 11-163363 (1999-06-01), None
patent: 11-307259 (1999-11-01), None
patent: 11-307264 (1999-11-01), None
patent: 2000-223276 (2000-08-01), None
patent: 2000-315580 (2000-11-01), None
patent: 2000-315581 (2000-11-01), None
patent: 2000-367784 (2002-12-01), None
patent: 2005-019074 (2005-01-01), None
patent: 2005-026121 (2005-01-01), None
patent: 2005-032618 (2005-02-01), None

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