Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-05-27
2010-10-26
Phan, Trong (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189120, C365S230030, C365S236000, C365S240000
Reexamination Certificate
active
07821861
ABSTRACT:
A memory device and a refresh method are provided herein. The memory device includes a memory array having memory rows. When an array refresh strobe (ARS) signal is received, it is determined whether the memory rows are required to be refreshed according to tag flags and reset statuses corresponding to the memory rows. When a row refresh strobe (RRS) signal is received, it is determined whether to refresh one of the memory rows according to a plurality of parameters including a value of a row to refresh counter, a value of a refresh deadline counter and/or a queue. When it is decided to start a refresh operation, one of the memory rows is selected according to the tag flag and the status, and the status of the selected memory row is updated after the selected memory row is refreshed.
REFERENCES:
patent: 5987589 (1999-11-01), Kawasaki et al.
patent: 6094705 (2000-07-01), Song
patent: 6154409 (2000-11-01), Huang et al.
patent: 6167484 (2000-12-01), Boyer et al.
patent: 6178479 (2001-01-01), Vishin
patent: 6240032 (2001-05-01), Fukumoto
patent: 6426909 (2002-07-01), Tomita
patent: 6490216 (2002-12-01), Chen et al.
patent: 6515929 (2003-02-01), Ting et al.
patent: 6542957 (2003-04-01), Miura et al.
patent: 6650586 (2003-11-01), Fanning
patent: 6999369 (2006-02-01), Perner
patent: 7000846 (2006-02-01), Hakushi et al.
patent: 7020038 (2006-03-01), Shieh
patent: 7031217 (2006-04-01), Hiraki et al.
patent: 7366034 (2008-04-01), Kozakai et al.
patent: 7427031 (2008-09-01), Hakushi et al.
Lee Tzu-Fang
Lin Chien-Hong
Wang Chi-Lung
Industrial Technology Research Institute
Jianq Chyun IP Office
Phan Trong
LandOfFree
Memory device and refresh method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device and refresh method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and refresh method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4182204