Memory device and methods thereof

Details Memory device and methods thereof Memory device and methods thereof

2011-06-14

2011-06-14

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S239000, C365S189040, C365S192000, C365S189020

Reexamination Certificate

active

07961536

ABSTRACT:
A device includes a memory configured so that, in the event that one pass-gate transistor associated with a bit cell is determined to be excessively weak such that reading the bit cell could be undesirably difficult, a second pass-gate transistor can be configured to support a read operation. For example, during a manufacturing test procedure, the access speed of each bit cell at a memory device is determined. If a bit cell fails to achieve a desired access speed, the column of the memory that includes the defective bit cell can be configured to access information stored at the bit cell using the second bit line associated with the second pass-gate transistor.

REFERENCES:
patent: 2007/0168784 (2007-07-01), Hazama

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