Memory device and method of use

Details Memory device and method of use Memory device and method of use

2006-11-21

2006-11-21

Tran, M. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07139191

ABSTRACT:
A memory device includes a material layer associated with at least one memory cell. The material layer is alterable to change the electrical resistance of the memory cell.

REFERENCES:
patent: 5793675 (1998-08-01), Cappelletti et al.
patent: 6388927 (2002-05-01), Churchill et al.
patent: 6400600 (2002-06-01), Nickel et al.
patent: 6456525 (2002-09-01), Perner et al.
patent: 2003/0098693 (2003-05-01), Enk
patent: 2004/0126905 (2004-07-01), Bhattacharyya et al.
patent: 2005/0190615 (2005-09-01), Linde et al.

Affiliated with

Also associated with

Rating

Memory device and method of use does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device and method of use, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and method of use will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3702123